BCP55TF

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Manufacturer part number:BCP55TF

Manufacturer:Nexperia USA Inc.

Description:BCP55TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:BCP55TF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Part Status	Active
Pin Count	4
Power - Max	1.3W
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1A
Frequency - Transition	155MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.406000	$0.406
10	$0.383019	$3.83019
100	$0.361339	$36.1339
500	$0.340885	$170.4425
1000	$0.321590	$321.59

BCP55TF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.