BCV26,235 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.A collector emitter saturation voltage of 1V ensures maximum design flexibility.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Parts of this part have transition frequencies of 220MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BCV26,235 Features

the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz

BCV26,235 Applications

There are a lot of Nexperia USA Inc. BCV26,235 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting