2SD2560 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website
SOT-23
2SD2560 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
1999
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN RESISTOR
Power - Max
130W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
5000 @ 10A 4V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2.5V @ 10mA, 10A
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
15A
Transition Frequency
70MHz
Frequency - Transition
70MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.528678
$0.528678
10
$0.498753
$4.98753
100
$0.470522
$47.0522
500
$0.443889
$221.9445
1000
$0.418763
$418.763
2SD2560 Product Details
2SD2560 Overview
DC current gain in this device equals 5000 @ 10A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 10mA, 10A.70MHz is present in the transition frequency.Collector Emitter Breakdown occurs at 150VV - Maximum voltage.
2SD2560 Features
the DC current gain for this device is 5000 @ 10A 4V the vce saturation(Max) is 2.5V @ 10mA, 10A a transition frequency of 70MHz
2SD2560 Applications
There are a lot of Sanken 2SD2560 applications of single BJT transistors.