BCW69,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCW69,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCW69
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
150mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.04998
$0.14994
6,000
$0.04410
$0.2646
15,000
$0.03822
$0.5733
30,000
$0.03626
$1.0878
75,000
$0.03430
$2.5725
150,000
$0.03234
$4.851
BCW69,215 Product Details
BCW69,215 Overview
This device has a DC current gain of 120 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 2.5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.This device can take an input voltage of 45V volts before it breaks down.Collector current can be as low as 100mA volts at its maximum.
BCW69,215 Features
the DC current gain for this device is 120 @ 2mA 5V the vce saturation(Max) is 150mV @ 2.5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
BCW69,215 Applications
There are a lot of Nexperia USA Inc. BCW69,215 applications of single BJT transistors.