PBSS4041NZ,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4041NZ,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.6W
Base Part Number
PBSS4041N
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.6W
Gain Bandwidth Product
105MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 4A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
195mV @ 350mA, 7A
Collector Emitter Breakdown Voltage
60V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS4041NZ,115 Product Details
PBSS4041NZ,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 4A 2V DC current gain.A VCE saturation (Max) of 195mV @ 350mA, 7A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.As a result, it can handle voltages as low as 60V volts.When collector current reaches its maximum, it can reach 7A volts.
PBSS4041NZ,115 Features
the DC current gain for this device is 250 @ 4A 2V the vce saturation(Max) is 195mV @ 350mA, 7A the emitter base voltage is kept at 5V
PBSS4041NZ,115 Applications
There are a lot of Nexperia USA Inc. PBSS4041NZ,115 applications of single BJT transistors.