BSH201,215

new-10%

Manufacturer part number:BSH201,215

Manufacturer:Nexperia USA Inc.

Description:MOSFET P, 60 V 0.3 A 417 mW SOT-23 | NXP BSH201215 (MOSFET P, 60 V 0.3 A 417 mW SOT-23 Transistors).

Case Package:SOT-23

Datasheet:BSH201,215 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.21.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	417mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	417mW
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5 Ω @ 160mA, 10V
Vgs(th) (Max) @ Id	1V @ 1mA (Min)
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 48V
Current - Continuous Drain (Id) @ 25°C	300mA Ta
Gate Charge (Qg) (Max) @ Vgs	3nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	-300mA
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant