NTE4153NT1G

new-10%

Manufacturer part number:NTE4153NT1G

Manufacturer:ON Semiconductor

Description:NTE4153NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTE4153NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	230MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	915mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300mW Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	3.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 16V
Current - Continuous Drain (Id) @ 25°C	915mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.82nC @ 4.5V
Rise Time	4.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	4.4 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	915mA
Threshold Voltage	760mV
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	20V
Nominal Vgs	760 mV
Height	800μm
Length	1.7mm
Width	950μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free