BSR41,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BSR41,115 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
1.35W
Terminal Form
FLAT
Frequency
100MHz
Base Part Number
BSR41
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
100MHz
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.887954
$8.887954
10
$8.384862
$83.84862
100
$7.910248
$791.0248
500
$7.462498
$3731.249
1000
$7.040092
$7040.092
BSR41,115 Product Details
BSR41,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 100MHz.Input voltage breakdown is available at 60V volts.Collector current can be as low as 1A volts at its maximum.
BSR41,115 Features
the DC current gain for this device is 100 @ 100mA 5V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
BSR41,115 Applications
There are a lot of Nexperia USA Inc. BSR41,115 applications of single BJT transistors.