BSS84AKM,315

new-10%

Manufacturer part number:BSS84AKM,315

Manufacturer:Nexperia USA Inc.

Description:BSS84AKM - 50 V, 230 mA P-channel Trench MOSFET

Case Package:SOT-23

Datasheet:BSS84AKM,315 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	340mW Ta 2.7W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	340mW
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 25V
Current - Continuous Drain (Id) @ 25°C	230mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.35nC @ 5V
Rise Time	11ns
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	-230mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	-50V
Drain-source On Resistance-Max	8.5Ohm
Drain to Source Breakdown Voltage	-50V
Max Junction Temperature (Tj)	150°C
Ambient Temperature Range High	150°C
Height	500μm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free