IRFS450B

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Manufacturer part number:IRFS450B

Manufacturer:ON Semiconductor

Description:IRFS450B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:IRFS450B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Weight	6.962g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	96W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	96W
Case Connection	ISOLATED
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	390m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.6A Tc
Gate Charge (Qg) (Max) @ Vgs	113nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	125 ns
Turn-Off Delay Time	260 ns
Continuous Drain Current (ID)	9.6A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.39Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	38.4A
Avalanche Energy Rating (Eas)	990 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant