BUK7K89-100EX datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Nexperia USA Inc. stock available on our website
SOT-23
BUK7K89-100EX Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-1205, 8-LFPAK56
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Max Power Dissipation
38W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PDSO-G6
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Power - Max
38W
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
82.5m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
811pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
13.6nC @ 10V
Drain to Source Voltage (Vdss)
100V
Continuous Drain Current (ID)
13A
Pulsed Drain Current-Max (IDM)
51A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
19.5 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,500
$0.42803
$0.42803
3,000
$0.38790
$1.1637
7,500
$0.36115
$2.52805
10,500
$0.34778
$3.4778
BUK7K89-100EX Product Details
BUK7K89-100EX Description
TrenchMOS-based dual Standard level N-channel MOSFETs in an LFPAK56D (Dual Power-SO8) package. To meet the requirements of AEC Q101, this product has been designed and certified for use in high performance automotive applications.
BUK7K89-100EX Features
Dual MOSFET
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C