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FDMA3023PZ

FDMA3023PZ

FDMA3023PZ

ON Semiconductor

FDMA3023PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMA3023PZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 90MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Max Power Dissipation 1.4W
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 5 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 4ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 2.9A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -600 mV
Height 750μm
Length 2mm
Width 2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.23925 $0.71775
6,000 $0.22275 $1.3365
15,000 $0.21450 $3.2175
30,000 $0.21000 $6.3
FDMA3023PZ Product Details

FDMA3023PZ          Description


 The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved. The MicroFET 2X2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.


FDMA3023PZ              Features

 

Max rDS(on) = 90 m|? at VGS = -4.5 V, ID = -2.9 A

Max rDS(on)= 130 mm|? at VGS = -2.5 V, ID = -2.6 A

Max rDS(on) = 170 mm|? at VGS = -1.8 V, ID = -1.7 A

Max rDS(on) = 240 mm|? at VGS = -1.5 V, ID = -1.0 A

Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

HBM ESD protection level > 2 kV (Note 3)

RoHS Compliant


FDMA3023PZ                 Applications


This product is general usage and suitable for many different applications.

 

 

 




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