BUK9E06-55B,127

new-10%

Manufacturer part number:BUK9E06-55B,127

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 55V 75A I2PAK

Case Package:SOT-23

Datasheet:BUK9E06-55B,127 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	258W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	258W
Case Connection	DRAIN
Turn On Delay Time	37 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	7565pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 5V
Rise Time	95ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±15V
Fall Time (Typ)	106 ns
Turn-Off Delay Time	117 ns
Continuous Drain Current (ID)	146A
Gate to Source Voltage (Vgs)	15V
Max Dual Supply Voltage	55V
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.0064Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	587A
Avalanche Energy Rating (Eas)	679 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant