BUK9Y19-55B,115

new-10%

Manufacturer part number:BUK9Y19-55B,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET TRENCH 31V-99V G3

Case Package:SOT-23

Datasheet:BUK9Y19-55B,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	85W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	85W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1992pF @ 25V
Current - Continuous Drain (Id) @ 25°C	46A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
Rise Time	180ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Fall Time (Typ)	134 ns
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	46A
Gate to Source Voltage (Vgs)	15V
Max Dual Supply Voltage	55V
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	80 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant