SIHP6N65E-GE3

new-10%

Manufacturer part number:SIHP6N65E-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220AB

Case Package:SOT-23

Datasheet:SIHP6N65E-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	78W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	78W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	7A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	4V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.6Ohm
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	56 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free