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PBSS4112PANP,115

PBSS4112PANP,115

PBSS4112PANP,115

Nexperia USA Inc.

PBSS4112PANP - 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

SOT-23

PBSS4112PANP,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Base Part Number PBSS4112PAN
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Case Connection COLLECTOR
Power - Max 510mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 120mV @ 50mA, 500mA
Current - Collector (Ic) (Max) 1A
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -150mV
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.462000 $0.462
10 $0.435849 $4.35849
100 $0.411178 $41.1178
500 $0.387904 $193.952
1000 $0.365947 $365.947

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