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PBSS5480X,135

  • PBSS5480X,135
  • PBSS5480X,135

PBSS5480X,135

PBSS5480X,135

Nexperia USA Inc.

PBSS5480X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5480X,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.5W
Terminal Form FLAT
Frequency 125MHz
Base Part Number PBSS5480
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Case Connection COLLECTOR
Power - Max 1.6W
Transistor Application SWITCHING
Gain Bandwidth Product 125MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 380mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 125MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.341760 $0.34176
10 $0.322415 $3.22415
100 $0.304165 $30.4165
500 $0.286948 $143.474
1000 $0.270706 $270.706
PBSS5480X,135 Product Details

PBSS5480X,135 Overview


DC current gain in this device equals 150 @ 2A 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 380mV @ 500mA, 5A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 125MHz.Breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

PBSS5480X,135 Features


the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 380mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 125MHz

PBSS5480X,135 Applications


There are a lot of Nexperia USA Inc. PBSS5480X,135 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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