PBSS305PX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS305PX,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Terminal Form
FLAT
Frequency
100MHz
Base Part Number
PBSS305P
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
420mV @ 235mA, 4.7A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
Turn Off Time-Max (toff)
285ns
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.876360
$0.87636
10
$0.826755
$8.26755
100
$0.779957
$77.9957
500
$0.735809
$367.9045
1000
$0.694159
$694.159
PBSS305PX,115 Product Details
PBSS305PX,115 Overview
This device has a DC current gain of 120 @ 2A 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 100MHz.Single BJT transistor can be broken down at a voltage of 80V volts.In extreme cases, the collector current can be as low as 4A volts.
PBSS305PX,115 Features
the DC current gain for this device is 120 @ 2A 2V the vce saturation(Max) is 420mV @ 235mA, 4.7A the emitter base voltage is kept at 5V a transition frequency of 100MHz
PBSS305PX,115 Applications
There are a lot of Nexperia USA Inc. PBSS305PX,115 applications of single BJT transistors.