The Nexperia PDTD113ET,215 is a single, pre-biased bipolar transistor (BJT) designed for use in a wide range of applications. It is a NPN transistor with a maximum power dissipation of 250mW and a TO236AB package.
Features of the PDTD113ET,215 include a low collector-emitter saturation voltage, a high current gain, and a low noise figure. It also has a high switching speed and a wide operating temperature range.
Applications of the PDTD113ET,215 include power management, audio amplifiers, motor control, and signal processing. It is also suitable for use in automotive, industrial, and consumer electronics.