RN1112(TE85L,F)

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RN1112(TE85L,F)

Manufacturer part number:RN1112(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1112(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1112(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	BIP General Purpose Small Signal
Number of Elements	1
Power - Max	100mW
Polarity/Channel Type	NPN
Transistor Type	NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	250MHz
Power Dissipation-Max (Abs)	0.1W
Resistor - Base (R1)	22 k Ω
RoHS Status	RoHS Compliant