PH3120L,115

new-10%

Manufacturer part number:PH3120L,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 20V 100A LFPAK

Case Package:SOT-23

Datasheet:PH3120L,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Power Dissipation-Max	62.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	62.5W
Case Connection	DRAIN
Turn On Delay Time	34 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.65m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4457pF @ 10V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	48.5nC @ 4.5V
Rise Time	90ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	88 ns
Turn-Off Delay Time	114 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0037Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	300A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free