PHB110NQ08T,118

new-10%

Manufacturer part number:PHB110NQ08T,118

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 75V 75A D2PAK

Case Package:SOT-23

Datasheet:PHB110NQ08T,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.75
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	230W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	230W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4860pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	113.1nC @ 10V
Rise Time	107ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	183 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	75V
Drain-source On Resistance-Max	0.009Ohm
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	440A
Avalanche Energy Rating (Eas)	560 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant