PHK12NQ03LT,518

new-10%

Manufacturer part number:PHK12NQ03LT,518

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 30V 11.8A SOT96

Case Package:SOT-23

Datasheet:PHK12NQ03LT,518 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	TrenchMOS™
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.5m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1335pF @ 16V
Gate Charge (Qg) (Max) @ Vgs	17.6nC @ 5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	11.8A
JEDEC-95 Code	MS-012AA
Drain Current-Max (Abs) (ID)	12A
Drain-source On Resistance-Max	0.0105Ohm
Pulsed Drain Current-Max (IDM)	35.3A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	440 mJ
RoHS Status	Non-RoHS Compliant