PHPT610035NKX datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available on our website
SOT-23
PHPT610035NKX Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-1205, 8-LFPAK56
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
1.25W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PDSO-G6
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS
Case Connection
COLLECTOR
Power - Max
1.25W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
2 NPN (Dual)
Collector Emitter Voltage (VCEO)
330mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
330mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
140MHz
Max Breakdown Voltage
100V
Frequency - Transition
140MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PHPT610035NKX Product Details
PHPT610035NKX Description
NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK NPN/PNP complement: PHPT610035NPK
PHPT610035NKX FEATURES
• Current gain matching 5%
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation