PMDXB600UNEZ

new-10%

Manufacturer part number:PMDXB600UNEZ

Manufacturer:Nexperia USA Inc.

Description:MOSFET 2N-CH 20V 0.6A 6DFN

Case Package:SOT-23

Datasheet:PMDXB600UNEZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Max Power Dissipation	265mW
Pin Count	6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	5.6 ns
Power - Max	265mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	620m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	21.3pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.7nC @ 4.5V
Rise Time	9.2ns
Fall Time (Typ)	51 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	600mA
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free