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PSMN1R5-40PS,127

PSMN1R5-40PS,127

PSMN1R5-40PS,127

Nexperia USA Inc.

PSMN1R5-40PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PSMN1R5-40PS,127 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 338W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 338W
Case Connection DRAIN
Turn On Delay Time 45.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9710pF @ 20V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 136nC @ 10V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 111 ns
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.447066 $0.447066
10 $0.421760 $4.2176
100 $0.397887 $39.7887
500 $0.375365 $187.6825
1000 $0.354118 $354.118
PSMN1R5-40PS,127 Product Details

PSMN1R5-40PS,127 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9710pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120A.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.It is [111 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45.2 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 40V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

PSMN1R5-40PS,127 Features


a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 111 ns

PSMN1R5-40PS,127 Applications


There are a lot of Nexperia USA Inc. PSMN1R5-40PS,127 applications of single MOSFETs transistors.

  • Lighting
  • Motor control
  • Battery Protection Circuit
  • Power Management Functions
  • LCD/LED/ PDP TV Lighting
  • DC/DC converters
  • Server power supplies
  • Uninterruptible Power Supply
  • LCD/LED TV
  • Load switching

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