PSMN1R5-40PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available on our website
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PSMN1R5-40PS,127 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
338W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
338W
Case Connection
DRAIN
Turn On Delay Time
45.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
9710pF @ 20V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
136nC @ 10V
Rise Time
66ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
53 ns
Turn-Off Delay Time
111 ns
Continuous Drain Current (ID)
120A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
40V
Drain to Source Breakdown Voltage
40V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.447066
$0.447066
10
$0.421760
$4.2176
100
$0.397887
$39.7887
500
$0.375365
$187.6825
1000
$0.354118
$354.118
PSMN1R5-40PS,127 Product Details
PSMN1R5-40PS,127 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9710pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120A.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.It is [111 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45.2 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 40V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
PSMN1R5-40PS,127 Features
a continuous drain current (ID) of 120A a drain-to-source breakdown voltage of 40V voltage the turn-off delay time is 111 ns
PSMN1R5-40PS,127 Applications
There are a lot of Nexperia USA Inc. PSMN1R5-40PS,127 applications of single MOSFETs transistors.