IXFK210N30X3

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Manufacturer part number:IXFK210N30X3

Manufacturer:IXYS

Description:MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 105A, 10V ±20V 24.2nF @ 25V 375nC @ 10V 300V TO-264-3, TO-264AA

Case Package:SOT-23

Datasheet:IXFK210N30X3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1250W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.5m Ω @ 105A, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	24.2nF @ 25V
Current - Continuous Drain (Id) @ 25°C	210A Tc
Gate Charge (Qg) (Max) @ Vgs	375nC @ 10V
Drain to Source Voltage (Vdss)	300V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$22.80000	$22.8
25	$19.38000	$484.5
100	$18.01200	$1801.2
500	$15.96000	$7980

IXFK210N30X3 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 24.2nF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.