Name: IXFK210N30X3
Brand: IXYS
SKU: IXFK210N30X3
Price: 33.68000 USD
Availability: InStock

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IXFK210N30X3

Manufacturer part number:IXFK210N30X3

Manufacturer:IXYS

Description:MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 105A, 10V ±20V 24.2nF @ 25V 375nC @ 10V 300V TO-264-3, TO-264AA

Case Package:SOT-23

Datasheet:IXFK210N30X3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1250W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.5m Ω @ 105A, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	24.2nF @ 25V
Current - Continuous Drain (Id) @ 25°C	210A Tc
Gate Charge (Qg) (Max) @ Vgs	375nC @ 10V
Drain to Source Voltage (Vdss)	300V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

IXFK210N30X3 Product Details

IXFK210N30X3 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 24.2nF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.