PSMN4R3-100ES,127 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9900pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 122 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 45 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

PSMN4R3-100ES,127 Features

a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 122 ns

PSMN4R3-100ES,127 Applications

There are a lot of Nexperia USA Inc.
PSMN4R3-100ES,127 applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification