AFT31150N

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Manufacturer part number:AFT31150N

Manufacturer:NXP Semiconductors

Description:AFT31150N datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:AFT31150N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	10
Maximum VSWR	10
Maximum Power Dissipation (mW)	741000
Output Power (W)	150(Typ)
Typical Power Gain (dB)	17
Maximum Frequency (MHz)	3100
Minimum Frequency (MHz)	2700
Typical Drain Efficiency (%)	50
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	150
Supplier Package	OM-780 EP
Military	No
Mounting	Surface Mount
Package Height	3.86(Max)
Package Length	20.62(Max)
Package Width	10.01(Max)
PCB changed	3
Packaging	Tape and Reel
Part Status	Active
Type	MOSFET
Pin Count	3
Configuration	Single
Channel Type	N
Mode of Operation	Pulse
RoHS Status	RoHS Compliant