BLF2425M9LS140

new-10%

Manufacturer part number:BLF2425M9LS140

Manufacturer:NXP Semiconductors

Description:BLF2425M9LS140 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:BLF2425M9LS140 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	3.1
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	420
Maximum IDSS (uA)	4.2
Maximum Drain Source Resistance (mOhm)	69(Typ)@6.85V
Typical Forward Transconductance (S)	13
Output Power (W)	140
Typical Power Gain (dB)	19
Maximum Frequency (MHz)	2500
Minimum Frequency (MHz)	2400
Typical Drain Efficiency (%)	58
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	225
Military	No
Part Status	Active
Configuration	Single
Channel Type	N
Mode of Operation	CW
RoHS Status	RoHS Compliant