BLF7G20LS-160P,118

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BLF7G20LS-160P,118

Manufacturer part number:BLF7G20LS-160P,118

Manufacturer:NXP Semiconductors

Description:BLF7G20LS-160P,118 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:BLF7G20LS-160P,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	2
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum VSWR	10
Maximum Drain Source Resistance (mOhm)	150(Typ)@6.05V
Output Power (W)	135(Typ)
Typical Power Gain (dB)	18.5\|17.5
Maximum Frequency (MHz)	1880
Minimum Frequency (MHz)	1805
Typical Drain Efficiency (%)	57
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	200
AEC Qualified	No
Supplier Package	CDFM
Military	No
Mounting	Surface Mount
Package Height	4.75(Max)
Package Length	20.7(Max)
Package Width	9.91(Max)
PCB changed	5
Packaging	Tape and Reel
Part Status	Unconfirmed
Pin Count	5
Configuration	Dual Common Source
Channel Type	N
Mode of Operation	GSM EDGE\|CW
RoHS Status	RoHS Compliant