2SK241-GR

new-10%

Manufacturer part number:2SK241-GR

Manufacturer:Toshiba

Description:2SK241-GR datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Toshiba stock available on our website

Case Package:SOT-23

Datasheet:2SK241-GR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	NO
Material	Si
Number of Terminals	3
Transistor Element Material	SILICON
ECCN (US)	EAR99
Channel Mode	Depletion
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±5
Maximum Continuous Drain Current (A)	0.03
Maximum Gate Source Leakage Current (nA)	50
Maximum IDSS (uA)	14000
Typical Input Capacitance @ Vds (pF)	3@10V
Typical Reverse Transfer Capacitance @ Vds (pF)	0.035@10V
Typical Forward Transconductance (S)	0.01
Maximum Power Dissipation (mW)	200
Typical Power Gain (dB)	28
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	125
Supplier Package	2-4E1D
Military	No
Mounting	Through Hole
Package Height	3.2(Max)
Package Length	4.2(Max)
Package Width	2.6(Max)
PCB changed	3
Package Shape	RECTANGULAR
Manufacturer	Toshiba America Electronic Components
JESD-609 Code	e0
Part Status	Obsolete
ECCN Code	EAR99
Terminal Finish	TIN LEAD
HTS Code	8541.21.00.95
Subcategory	FET General Purpose Power
Terminal Position	SINGLE
Terminal Form	THROUGH-HOLE
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	Single
Operating Mode	DEPLETION MODE
Transistor Application	AMPLIFIER
Polarity/Channel Type	N-CHANNEL
Drain Current-Max (Abs) (ID)	0.03 A
DS Breakdown Voltage-Min	20 V
Channel Type	N
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	0.2 W
Feedback Cap-Max (Crss)	0.05 pF
Highest Frequency Band	VERY HIGH FREQUENCY BAND
RoHS Status	RoHS non-compliant