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AFM907NT1

AFM907NT1

AFM907NT1

NXP USA Inc.

AFM907NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFM907NT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Package / Case 16-VDFN Exposed Pad
Packaging Tape & Reel (TR)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated 30V
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 136MHz~941MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 100mA
Transistor Type LDMOS
Power - Output 8.4W
Voltage - Test 10.8V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.40273 $1.40273
2,000 $1.30599 $2.61198
5,000 $1.28664 $6.4332
AFM907NT1 Product Details

AFM907NT1 Description

 

AFM907NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFM907NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFM907NT1 has the common source configuration.

 

 

AFM907NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFM907NT1 Applications

 

ISM applications

DC large signal applications


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