AFT05MS006NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
AFT05MS006NT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
PLD-1.5W
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
30V
HTS Code
8541.29.00.75
Peak Reflow Temperature (Cel)
260
Frequency
520MHz
[email protected] Reflow Temperature-Max (s)
40
Current - Test
100mA
Transistor Type
LDMOS
Gain
18.3dB
Power - Output
6W
Voltage - Test
7.5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$1.95132
$1.95132
2,000
$1.85376
$3.70752
AFT05MS006NT1 Product Details
AFT05MS006NT1 Description
AFT05MS006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT05MS006NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT05MS006NT1 has the common source configuration.