Welcome to Hotenda.com Online Store!

logo
userjoin
Home

AFT05MS006NT1

AFT05MS006NT1

AFT05MS006NT1

NXP USA Inc.

AFT05MS006NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFT05MS006NT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case PLD-1.5W
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 30V
HTS Code 8541.29.00.75
Peak Reflow Temperature (Cel) 260
Frequency 520MHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 100mA
Transistor Type LDMOS
Gain 18.3dB
Power - Output 6W
Voltage - Test 7.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.95132 $1.95132
2,000 $1.85376 $3.70752
AFT05MS006NT1 Product Details


AFT05MS006NT1 Description

 

AFT05MS006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT05MS006NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT05MS006NT1 has the common source configuration.

 

 

AFT05MS006NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFT05MS006NT1 Applications

 

ISM applications

DC large signal applications


Related Part Number

MRFE6VS25GNR1
MRFE6VS25GNR1
$0 $/piece
MMRF1314GSR5
MMRF1314GSR5
$0 $/piece
PTFA180701E-V4-R250
BLS8G2731LS-400PU
BLF888AS,112
MRF24301HR5
MRF24301HR5
$0 $/piece
AFV121KHR5
AFV121KHR5
$0 $/piece
MMRF1304GNR1
MMRF1304GNR1
$0 $/piece
PD55003S-E
GTVA262711FA-V2-R2

Get Subscriber

Enter Your Email Address, Get the Latest News