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AFT27S010NT1

  • AFT27S010NT1
  • AFT27S010NT1

AFT27S010NT1

AFT27S010NT1

NXP USA Inc.

AFT27S010NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFT27S010NT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case PLD-1.5W
Surface Mount YES
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 65V
HTS Code 8541.29.00.40
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 2.17GHz
[email protected] Reflow Temperature-Max (s) 40
Operating Temperature (Max) 150°C
Configuration Single
Current - Test 90mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 21.7dB
Power - Output 1.26W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $9.88669 $9.88669
AFT27S010NT1 Product Details

AFT27S010NT1 Description

 

AFT27S010NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes AFT27S010NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT27S010NT1 has the common source configuration.

 

 

AFT27S010NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFT27S010NT1 Applications

 

ISM applications

DC large signal applications


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