BAP63-03,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website
SOT-23
BAP63-03,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Package / Case
SC-76, SOD-323
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
HTS Code
8541.10.00.70
Subcategory
PIN Diodes
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BAP63
Pin Count
2
JESD-30 Code
R-PDSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
500mW
Diode Type
PIN - Single
Application
ATTENUATOR; SWITCHING
Current - Max
100mA
Capacitance @ Vr, F
0.32pF @ 20V 1MHz
Voltage - Peak Reverse (Max)
50V
Breakdown Voltage-Min
50V
Frequency Band
S B
Diode Capacitance-Nom
0.4pF
Resistance @ If, F
1.5Ohm @ 100mA 100MHz
Diode Capacitance-Max
0.32pF
Minority Carrier Lifetime-Nom
0.31 μs
Diode Res Test Current
0.5mA
Diode Res Test Frequency
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.04000
$0.04
500
$0.0396
$19.8
1000
$0.0392
$39.2
1500
$0.0388
$58.2
2000
$0.0384
$76.8
2500
$0.038
$95
BAP63-03,115 Product Details
BAP63-03,115 Overview
In this device, the maximum current is 100mA mA.Based on its applicable specifications, this device operates at 50V peak reverse voltage.The device may occasionally run at its lowest breakdown voltage.
BAP63-03,115 Features
from a maximum current of 100mA volts at its lowest breakdown voltage of 50V
BAP63-03,115 Applications
There are a lot of NXP USA Inc. BAP63-03,115 applications of RF diodes.