BAP70-02,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website
SOT-23
BAP70-02,115 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Package / Case
SC-79, SOD-523
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Additional Feature
HIGH VOLTAGE
HTS Code
8541.10.00.70
Subcategory
PIN Diodes
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BAP70
Pin Count
2
JESD-30 Code
R-PDSO-F2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
415mW
Diode Type
PIN - Single
Application
ATTENUATOR
Current - Max
100mA
Capacitance @ Vr, F
0.25pF @ 20V 1MHz
Voltage - Peak Reverse (Max)
50V
Breakdown Voltage-Min
50V
Diode Capacitance-Nom
0.57pF
Resistance @ If, F
1.9Ohm @ 100mA 100MHz
Diode Capacitance-Max
0.25pF
Minority Carrier Lifetime-Nom
1.25 µs
Diode Res Test Current
0.5mA
Diode Res Test Frequency
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BAP70-02,115 Product Details
BAP70-02,115 Overview
Designed to operate from a maximum of 100mA volts, this device operates from a maximum current of 100mA volts.This device operates at a maximum reverse voltage of 50V based on the applicable device specifications.The device may occasionally run at its lowest breakdown voltage.
BAP70-02,115 Features
from a maximum current of 100mA volts at its lowest breakdown voltage of 50V
BAP70-02,115 Applications
There are a lot of NXP USA Inc. BAP70-02,115 applications of RF diodes.
Sensor interfaces of security systems
UHF mixer
Compensators
RF attenuators
Broadband system applications i.e. WCDMA, CATV, etc.