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BF998,215

BF998,215

BF998,215

NXP USA Inc.

MOSFET NCH DUAL GATE 12V SOT143B

SOT-23

BF998,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case TO-253-4, TO-253AA
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 1996
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 12V
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Subcategory FET General Purpose Power
Current Rating (Amps) 30mA
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BF998
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode DUAL GATE, DEPLETION MODE
Case Connection SOURCE
Current - Test 10mA
Transistor Application AMPLIFIER
Transistor Type N-Channel Dual Gate
Drain Current-Max (Abs) (ID) 0.03A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.2W
Noise Figure 0.6dB
Voltage - Test 8V
RoHS Status ROHS3 Compliant

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