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BFR31,215

BFR31,215

BFR31,215

NXP USA Inc.

BFR31,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

BFR31,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFR31
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 250mW
FET Type N-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V
Drain to Source Voltage (Vdss) 25V
DS Breakdown Voltage-Min 25V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.3W
Feedback Cap-Max (Crss) 1.5 pF
Current - Drain (Idss) @ Vds (Vgs=0) 1mA @ 10V
Voltage - Cutoff (VGS off) @ Id 2.5V @ 0.5nA
Current Drain (Id) - Max 10mA
RoHS Status ROHS3 Compliant
BFR31,215 Product Details

BFR31,215 Description


A plastic SOT23-packaged planar epitaxial symmetrical junction N-channel field-effect transistor.



BFR31,215 Features


  • Export regulation

  • Short-term information

  • qualified non-automotive items



BFR31,215 Applications


General-purpose low-level amplifiers for thick and thin films.


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