Trans GP BJT NPN 16V 0.065A Automotive 3-Pin TO-236AB T/R
SOT-23
BFU530AR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
LOW NOISE
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BFU530
Pin Count
3
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
450mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 8V
JEDEC-95 Code
TO-236AB
Gain
18dB
Voltage - Collector Emitter Breakdown (Max)
12V
Current - Collector (Ic) (Max)
40mA
Transition Frequency
11000MHz
Frequency - Transition
11GHz
Highest Frequency Band
L B
Noise Figure (dB Typ @ f)
0.6dB @ 900MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BFU530AR Product Details
Description:
The BFU530AR is a NPN Bipolar Junction Transistor (BJT) from NXP Semiconductors. It is designed for use in RF applications and is rated for a maximum collector-emitter voltage of 16V and a maximum collector current of 0.065A. It is packaged in a 3-pin TO-236AB package and is suitable for automotive applications.
Features:
• NPN Bipolar Junction Transistor (BJT) • Rated for a maximum collector-emitter voltage of 16V • Rated for a maximum collector current of 0.065A • Packaged in a 3-pin TO-236AB package • Suitable for automotive applications
Applications:
The BFU530AR is designed for use in RF applications such as amplifiers, oscillators, and mixers. It is also suitable for automotive applications.