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BLF4G10-160,112

BLF4G10-160,112

BLF4G10-160,112

NXP USA Inc.

TRANSISTOR RF LDMOS SOT502A

SOT-23

BLF4G10-160,112 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SOT-502A
Surface Mount YES
Transistor Element Material SILICON
Packaging Tube
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 65V
Subcategory FET General Purpose Power
Current Rating (Amps) 15A
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 894MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 900mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 19.7dB
Drain Current-Max (Abs) (ID) 15A
DS Breakdown Voltage-Min 65V
Power - Output 160W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant

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