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BLT81,115

BLT81,115

BLT81,115

NXP USA Inc.

NXP BLT81.115Bipolar - RF Transistor, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, 25

SOT-23

BLT81,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
HTS Code 8541.29.00.75
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLT81
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 300mA 5V
Gain 8dB
Voltage - Collector Emitter Breakdown (Max) 9.5V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 900MHz
Power Dissipation-Max (Abs) 2W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 4pF
Power Dissipation Ambient-Max 2W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.378458 $1.378458
10 $1.300432 $13.00432
100 $1.226822 $122.6822
500 $1.157380 $578.69
1000 $1.091868 $1091.868

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