BSR56,215 Description

For use in thick and thin-film circuits, symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) are packaged in a plastic microminiature envelope. The transistors are designed for low-power, switching or chopping industrial applications.

BSR56,215 Features

• Interchangeable drain and source connections

• Small package

BSR56,215 Applications

• Low-power, chopper or switching applications

• Thick and thin-film circuits