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BUK7511-55A,127

BUK7511-55A,127

BUK7511-55A,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 25A, 10V ±20V 3093pF @ 25V 55V TO-220-3

SOT-23

BUK7511-55A,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 166W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3093pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.011Ohm
Pulsed Drain Current-Max (IDM) 347A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 211 mJ
RoHS Status ROHS3 Compliant
BUK7511-55A,127 Product Details

BUK7511-55A,127 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 211 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3093pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 75A.A maximum pulsed drain current of 347A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 55V.In order to operate this transistor, a voltage of 55V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

BUK7511-55A,127 Features


the avalanche energy rating (Eas) is 211 mJ
based on its rated peak drain current 347A.
a 55V drain to source voltage (Vdss)


BUK7511-55A,127 Applications


There are a lot of NXP USA Inc.
BUK7511-55A,127 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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