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IRF6668TR1

IRF6668TR1

IRF6668TR1

Infineon Technologies

MOSFET N-CH 80V 55A DIRECTFET-MZ

SOT-23

IRF6668TR1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MZ
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta 89W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant

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