IXFK66N50Q2

new-10%

Manufacturer part number:IXFK66N50Q2

Manufacturer:IXYS

Description:MOSFET N-CH 500V 66A TO-264

Case Package:SOT-23

Datasheet:IXFK66N50Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFET™
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	735W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	735W
Case Connection	DRAIN
Turn On Delay Time	32 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	8400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	66A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	66A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.08Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	264A
Avalanche Energy Rating (Eas)	4000 mJ
Height	26.16mm
Length	19.96mm
Width	5.13mm
RoHS Status	RoHS Compliant