MMRF5014HR5

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Manufacturer part number:MMRF5014HR5

Manufacturer:NXP USA Inc.

Description:MMRF5014HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:MMRF5014HR5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Package / Case	NI-360H-2SB
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
ECCN Code	EAR99
Voltage - Rated	125V
HTS Code	8541.29.00.75
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Frequency	2.5GHz
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Current - Test	350mA
Transistor Type	HEMT
Gain	18dB
Power - Output	125W
Voltage - Test	50V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
50	$348.19400	$17409.7

MMRF5014HR5 Description

MMRF5014HR5 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes MMRF5014HR5 transistor suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MMRF5014HR5 has the common source configuration.