MMRF5017HSR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MMRF5017HSR5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Package / Case
NI-400S-2S
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Voltage - Rated
150V
Peak Reflow Temperature (Cel)
260
Frequency
30MHz~2.2GHz
[email protected] Reflow Temperature-Max (s)
40
Current - Test
200mA
Transistor Type
HEMT
Gain
18.4dB
Power - Output
125W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$238.89000
$238.89
10
$228.79600
$2287.96
MMRF5017HSR5 Product Details
MMRF5017HSR5 Description
MMRF5017HSR5 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MMRF5017HSR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MMRF5017HSR5 has the common source configuration.
MMRF5017HSR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures