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MMRF5017HSR5

MMRF5017HSR5

MMRF5017HSR5

NXP USA Inc.

MMRF5017HSR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MMRF5017HSR5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Package / Case NI-400S-2S
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Voltage - Rated 150V
Peak Reflow Temperature (Cel) 260
Frequency 30MHz~2.2GHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 200mA
Transistor Type HEMT
Gain 18.4dB
Power - Output 125W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $238.89000 $238.89
10 $228.79600 $2287.96
MMRF5017HSR5 Product Details

MMRF5017HSR5 Description

 

MMRF5017HSR5 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MMRF5017HSR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MMRF5017HSR5 has the common source configuration.

 

 

MMRF5017HSR5 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

 

 

MMRF5017HSR5 Applications

 

ISM applications

DC large signal applications


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