AFT09MS015NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
AFT09MS015NT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
PLD-1.5W
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
40V
HTS Code
8541.29.00.40
Peak Reflow Temperature (Cel)
260
Frequency
870MHz
[email protected] Reflow Temperature-Max (s)
40
Current - Test
100mA
Transistor Type
LDMOS
Gain
17.2dB
Power - Output
16W
Voltage - Test
12.5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$3.45800
$3.458
2,000
$3.28510
$6.5702
AFT09MS015NT1 Product Details
AFT09MS015NT1 Description
AFT09MS015NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT09MS015NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT09MS015NT1 has the common source configuration.