MRF6S20010GNR1

new-10%

Manufacturer part number:MRF6S20010GNR1

Manufacturer:NXP USA Inc.

Description:MRF6S20010GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:MRF6S20010GNR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Package / Case	TO-270BA
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Voltage - Rated	68V
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Frequency	2.17GHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MRF6S20010
JESD-30 Code	R-PDFM-G2
Qualification Status	Not Qualified
Operating Temperature (Max)	225°C
Number of Elements	1
Configuration	SINGLE
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
Current - Test	130mA
Transistor Application	AMPLIFIER
Polarity/Channel Type	N-CHANNEL
Transistor Type	LDMOS
Gain	15.5dB
DS Breakdown Voltage-Min	68V
Power - Output	10W
FET Technology	METAL-OXIDE SEMICONDUCTOR
Voltage - Test	28V
RoHS Status	ROHS3 Compliant